OJIP曲線和JIP-test在植物干旱脅迫研究中的應用
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1 總述
1.1 干旱脅迫對光系統(tǒng)PSII的影響
1.2 干旱脅迫和熱脅迫的關系
圖1.暗適應條件下大麥OJIP曲線。大麥培育2周后,無水干旱處理2周。對照組和干旱處理組離體葉片45℃熱處理10min,適應環(huán)境溫度5min后,測定葉綠素熒光[31]。 |
2 干旱脅迫對植物OJIP曲線和JIP-test參數(shù)的影響
2.1 L&K峰
2.2 性能指數(shù)PI(performance index)
PI與干旱因子指數(shù)(DFI)密切相關,能夠顯示不同基因型植物對干旱反應的巨大差異。DFI是指在任意干旱脅迫時間內,干旱引起的PI相對降低量。Strauss等人于2006年即運用相似定義CFI(Chill Factor Index)檢測不同大豆基因型的耐寒性。DFI還用于10個大麥品種(圖2)[42]和21個芝麻突變體種質[48]在干旱脅迫下的特性鑒定。利用性能指數(shù)PI和OJIP曲線確定了埃及雙色大麥和高粱**耐性和最敏感的地方品種[49]。這些研究證明在PSII水平上區(qū)分耐旱品種和敏感品種是可能的。
圖2. 10個大麥品種在連續(xù)兩周干旱脅迫下干旱因子指數(shù)(DFI)與驅動力(DF)的關系。每個基因型都由表中代碼表示[42]。 |
2.4 延遲熒光
* 方框表示光合結構構件。綠色箭頭表示可以測量的物理信號,紅色箭頭表示根據(jù)這些信號重新計算的電子和能量流。信號:DF,延遲熒光;PF,即時熒光;MR,調制反射;RR,遠紅光(735nm)反射。 * 電子流:TR,能量俘獲;E21,從PSII天線到PSI的能量遷移(溢出);ED,來自內部供體的水或中間供體(ID)向PSII的電子供應;RE,通過PSI到NADP的電子流;CE,環(huán)式電子流。 * RC1*和RC2*分別是PSI和PSII的反應中心葉綠素,其他縮略語是光合光反應的經(jīng)典Z方案的標準縮寫。 |
圖4. JIP-test參數(shù)和延遲熒光參數(shù)I1/I2,該數(shù)據(jù)根據(jù)1184組不同含水量離體大豆葉片測量[59]。 |
本文內容源自《Emerging Technologies and Management of Crop Stress Tolerance A Sustainable Approach》Volume 2,Edited by Parvaiz Ahmad and Saiema Rasool.
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